温梯法Ce:YAG闪烁晶体的宏观缺陷观察  

Observation on Macro-defects in Ce:YAG Scintillation Crystal Grown by Temperature Gradient Technique (TGT)

作　　者：何晓明[1] 赵广军[1] 曾雄辉[1] 介明印[1] 周圣明[1] 徐军[1] 

机构地区：[1]中国科学院上海光学机密机械研究所,上海201800

出　　处：《人工晶体学报》2004年第2期213-216,共4页Journal of Synthetic Crystals

摘　　要：采用温度梯度法(TGT)成功生长了直径为76mm高光学质量的Ce:YAG高温闪烁晶体,采用偏光显微镜研究了Ce:YAG闪烁晶体中的主要宏观缺陷,观察到了生长条纹、侧心、气泡、包裹物以及应力双折射等宏观缺陷。实验结果表明,晶体中的气泡、包裹物以及应力双折射等宏观缺陷主要集中在晶体边缘部分,因此温梯法可以获得高质量的Ce:YAG闪烁晶体。The high quality Ce:YAG scintillation crystal with the diameter of 76mm was grown by temperature gradient technique (TGT). The main macroscopic defects such as striations, side cores, bubbles, inclusions and stress birefringence were observed in as-grown Ce:YAG crystal by means of cross-polarized light microscope. The results show that the main defects such as bubbles, inclusions and stress birefringence mainly exist near the crystal peripheral edges, so high optical quality Ce:YAG scintillation crystal can be grown by TGT method.

关 键 词：Ce:YAG 温度梯度法 无机闪烁晶体 宏观缺陷 提拉法 硅光二极管 

分 类 号：O77[理学—晶体学]