从P-a-SiC:H到P-μc-Si:H过程中材料特性的变化  

Change of Material Properties in the Process from P-a-SiC:H to P-μc-Si:H

作　　者：朱锋[1] 赵颖[1] 张晓丹[1] 孙建[1] 魏长春[1] 任慧智[1] 耿新华[1] 

机构地区：[1]南开大学光电子所,天津300071

出　　处：《人工晶体学报》2004年第2期152-155,共4页Journal of Synthetic Crystals

基　　金：国家科技部重大基础研究项目资助(G2000028203;G2000028202)

摘　　要：采用RF PECVD方法,在P a SiC:H薄膜沉积技术基础上,通过逐步减小碳、硼的掺杂浓度,增大氢稀释率,使材料从非晶态向微晶态转变,在获得本征微晶材料之后,再逐步增大硼掺杂浓度,得到P型微晶硅薄膜材料(暗电导率为5.22×10-3S/cm,光学带隙大于2.0eV)。在这个过程中可以明显观察到碳、硼抑制材料晶化的作用。On the basis of P-a-SiC:H thin film, increasing hydrogen dilution of the SiH_4 and dcreasing the dopant carbon and boron by degrees, the material deposited by RF-PECVD was transformed from amorphous silicon to microcrystalline silicon. After gaining the intrinsic microcrystalline silicon, the B_2H_6 was doped in it.Thus,we gained the P-μc-Si:H thin film materials with the dark conductivity of 5.22×10^(-3)S/cm,the optical band gap over 2.0eV.The performance of silicon materials is changed as the dopant concentration is increased. In the process, we could observe the effect of carbon and boron on materials, which restrain the crystalline.

关 键 词：微晶材料 微晶硅 非晶硅碳 光学带隙 电导率 太阳能电池 

分 类 号：TM914.4[电气工程—电力电子与电力传动]