新型高频硅光电负阻器件的特性模拟及测试分析  

Characteristic Simulation and Test Analyses of Darlington Photo-Lambda Bipolar Transistor

作　　者：朱胜利[1] 姚素英[1] 郑云光[1] 李树荣[1] 张世林[1] 郭维廉[1] 

机构地区：[1]天津大学电子信息工程学院微电子系,天津300072

出　　处：《Journal of Semiconductors》2004年第5期573-578,共6页半导体学报（英文版）

摘　　要：给出了达林顿 λ型光电双极晶体管 (DPL BT)的结构及其等效电路 ,并以此等效电路为基础 ,用 PSPICE电路模拟程序对 DPL BT的电学特性 (IC- VCE)进行了模拟 ,对所研制的 DPL BT器件进行了测试 ,并对模拟和实验结果作了深入分析 ,其 IC- VCE特性与模拟结果符合得较好 .研究发现 DPL BT具有良好的特性和多种光电功能 ,在光逻辑、光计算。The structure and equivalent circuit of photo negative resistance device——Darlington photo Lambda bipolar transistor(DPLBT) are introduced.The electric characteristic( I C V CE ) of DPLBT is analyzed by the program of PSPICE circuit simulation at the base of the equivalent circuit.The laboratorial device—DPLBT is tested and the test results agree with simulation results on electric characteristic.The test results and the simulation results are analyzed further.It is found that DPLBT can be extended into the area of optical logic,the optical computing,and the optical communication for its favorable characteristic and photoelectric functions in the future.

关 键 词：光电负阻器件 光电双极晶体管 模拟 

分 类 号：TN364[电子电信—物理电子学]