Study on absorbance and laser damage threshold of HfO_2 films prepared by ion-assisted reaction deposition  

作　　者：张大伟 范树海 高卫东 贺洪波 王英剑 邵建达 范正修 孙浩杰 

机构地区：[1]R&D Center for Optical Thin Film Coatings, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800 [2]Qufu First High School, Qufu 273100

出　　处：《Chinese Optics Letters》2004年第5期305-307,共3页中国光学快报（英文版）

摘　　要：Using a new kind of EH1000 ion source, hafnium dioxide (HfO2) films are deposited with different deposition techniques and different conditions. The absorbance and the laser damage threshold of these films have been measured and studied. By comparing these characteristics, one can conclude that under right conditions, such as high partial pressure of oxygen and right kind of ion source, the ion-assisted reaction deposition can prepare HfO2 films with higher laser induced damage threshold.Using a new kind of EH1000 ion source, hafnium dioxide (HfO2) films are deposited with different deposition techniques and different conditions. The absorbance and the laser damage threshold of these films have been measured and studied. By comparing these characteristics, one can conclude that under right conditions, such as high partial pressure of oxygen and right kind of ion source, the ion-assisted reaction deposition can prepare HfO2 films with higher laser induced damage threshold.

关 键 词：DEPOSITION OXIDES Partial pressure Thin films 

分 类 号：O484[理学—固体物理]