具有新型空穴缓冲层材料TiO_2的有机薄膜发光器件  

Improvement of the Organic EL Devices by Insertion of Nanometer Layer TiO_2

作　　者：张志峰[1] 邓振波[1] 鲁成祝[1] 徐登辉[1] 张梦欣[1] 梁春军[1] 林鹏[1] 刘青宜 

机构地区：[1]北方交通大学光电子技术研究所信息存储显示与材料开放实验室,北京100044 [2]许昌教育学院,许昌461000

出　　处：《光电子．激光》2004年第5期520-523,共4页Journal of Optoelectronics·Laser

基　　金：国家自然科学基金资助项目(69976010;10174001;90201004);北方交通大学基金资助项目(2001XM06)

摘　　要：以溶胶凝胶法制备的TiO2作为空穴缓冲层,在结构为ITO/TiO2/NPB/Alq/LiF/Al的器件中,改善了器件的发光效率。研究了TiO2厚度对器件发光特性的影响。在电流密度为100mA/cm2时,有缓冲层的器件发光效率为5cd/A,而没有缓冲层的器件发光效率为3.45cd/A,有TiO2缓冲层的器件发光效率有了明显提高。TiO2 achieved by the sol-gel method is inserted in organic electroluminescent (EL) devices as a buffer layer. The effect of the different TiO2 thickness on the device luminescence with the structure of ITO/TiO2/NPB/Alq3/LiF/AI is studied. When the buffer layer is 2 nm, the voltage of the devices decreases and the current density of the devices increases, because of the tunneling effect, and the efficiency of the device is best at the buffer layer thickness of 6 nm, because of the balance of the injecting hole and electron. As the current density is 100 cd/mA2, the efficiency of the 6 nm-thickness buffer layer device is 5 cd/A, and that without buffer layer device is 3.45 cd/A. The smooth of the ITO surface is also a factor that the efficiency increases.

关 键 词：有机电致发光 TIO2 Sol—gel法 二氧化钛 空穴缓冲层材料 

分 类 号：TN383.1[电子电信—物理电子学]