超晶格中浅杂质能带与光吸收  

Shallow Impurity Energy Band and Optical Absorption in Superlattice

作　　者：何素冰 赵冷柱[1] 

机构地区：[1]上海科技大学,201800

出　　处：《固体电子学研究与进展》1992年第2期102-108,共7页Research & Progress of SSE

摘　　要：超晶格BEST模式像传感器是近几年来发展的非常有潜力的红外探测器件。本文结合这种器件计算和讨论了超晶格中浅杂质能谱和光吸收,给出了:杂质能带;杂质离化能;杂质能带的带宽和能态密度;杂质基态与第一束缚子能带基态间光跃迁:量子化极限尺寸以及其它性质。这不但具有一定物理意义,并对于BEST模式红外传感器件的光吸收有一定参考价值。BEST(Bound to Extended Superlattice Transition)mode infrared image sensor is a extremely potential device developed recently. Based on the consideration of this device, the paper calculates and discusses the shallow impurity energy level and optical absorption and presents: the impurity band; the ion-ized energy; the width of impurity energy band; the energy state density; the elec-tron transition between impurity level and the first bound subband;the dimensional size of quantum confined effects as well as others. These are of significance in physics and in the design of BEST mode infrared image sensor.

关 键 词：超晶格 杂质 能带 光吸收 探测器 

分 类 号：TN361[电子电信—物理电子学]