GaAs半导体掺杂浓度的电反射光谱的研究  

An Investigation of GaAs Semiconductor Impurity Concentration with Electrolyte Electroreflectance Spectrum

作　　者：汪开源[1] 唐洁影[1] 高中林[1] 

机构地区：[1]东南大学电子工程系,南京210018

出　　处：《固体电子学研究与进展》1992年第4期343-347,共5页Research & Progress of SSE

摘　　要：在波长300～1 100nm范围内,对GaAs进行了电反射光谱的研究。建立了电反射光谱的测试系统,并对实验和理论作了详细分析。推导了某一固定波长电反射光谱与半导体表面掺杂浓度的理论关系。并利用电反射光谱的实验曲线计算了GaAs的表面掺杂浓度,所得结果与电化学C—V的测试结果一致,其精度为5％。An electrolyte electroreflectance (EER) spectrum measurement system has been set up. With this system ,the EER spectrum of GaAs semiconductor in the wavelength of 300-1 100 nm has been investigated. The principle and experiments of this EER spectrum are analyzed, and a theoretical formula which relates the EER spectrum at a certain wavelength to the GaAs surface impurity concentration, is derived. The experimental curve of the EER spectrum is used to calculate the GaAs surface impurity concentration, which agrees with the result of electrochemical C-V profiling within the precision of about 5%.

关 键 词：调制光谱学 反射率 能带结构 

分 类 号：O433[机械工程—光学工程]