Research progress of self-organized Ge quantum dots on Si substrate  

作　　者：HUANGChangjun YUJinzhong WANGQiming 

机构地区：[1]StateKeyLaboratoryonIntegratedOptoelectronics,InstituteofSemiconductors,ChineseAcademyofSciences,Beijing100083,China

出　　处：《Progress in Natural Science:Materials International》2004年第5期388-395,共8页自然科学进展·国际材料（英文版）

基　　金：Supported by the National Natural Science Foundation of China (Grant Nos. 69787004, 69746001, 69990540 and 69896260);the National High Technology Research and Development Program of China (Grant No. 863-307-06-05(03)); and the Major State Basic Res

摘　　要：A review is presented on recent research development of self-organized Ge/Si quantum dots (QDs). Emphasis is put on the morphological evolution of the Ge quantum dots grown on Si (001) substrate, the structure analysis of multilayer Ge QDs, the optical and electronic properties of these nanostructures, and the approaches to fabricating ordered Ge quantum dots.A review is presented on recent research development of self-organized Ge/Si quantum dots (QDs). Emphasis is put on the morphological evolution of the Ge quantum dots grown on Si (001) substrate, the structure analysis of multilayer Ge QDs, the optical and electronic properties of these nanostructures, and the approaches to fabricating ordered Ge quantum dots.

关 键 词：quantum dots Si-based optoelectronics SiGe material. 

分 类 号：TN304.2[电子电信—物理电子学] TN201