中高压电力电缆半导电屏蔽电阻率特性分析  

Analysis of the resistivity of the semi-conductive shield used in middle and high voltage power cables

作　　者：徐刚[1] 吴炯 

机构地区：[1]上海电机技术高等专科学校,上海200240 [2]上海电机技术研究所,上海200080

出　　处：《电线电缆》2004年第3期25-28,共4页Wire & Cable

摘　　要：本文分析了GB/T12706.2～3-2002及GB/T1107.1～2-2002额定电压6～30kV及35kV和110kV挤包绝缘电力电缆及交联聚乙烯绝缘电力电缆标准中提出的半导电屏蔽电阻率技术指标规定的理论依据,探讨上述标准中指出老化前、后导体半导电屏蔽电阻率均不超过103Ω·m,绝缘半导电屏蔽电阻率均不超过5×102Ω·m规定值对电缆运行特性的影响。This paper analyses the theoretical basis of the requirements for the resistivity of the semi-conductive shield stipulated in the standards GB/T 12706.2～3-2002 Power cable with extruded insulation and Power cable with XLPE insulation of rated voltages 6～30 kV and 36 kV and GB/T 11017.1～2-2002 Power cable with extruded insulation and Power cable with XLPE insulation of rated voltage of 110 kV. It investigates the effect of the requirements stipulated in the a.m. standards on the cable performance that the conductor shield shall have a resistivty not exceeding 10~3 Ω·m before and after aging and that insulation shield shall have a resistivty not exceeding 5×~2 Ω·m before and after aging.

关 键 词：中高压挤包绝缘电力电缆 半导电屏蔽电阻率 特性分析 电阻率稳定性 

分 类 号：TM247.1[一般工业技术—材料科学与工程]