测定f″_(Ga)的有效反常散射因数法  

Effective Anomalous Scattering Factor Method in Determination of f_(Ga)~″

作　　者：赵宗彦[1] 赵慎强[1] 韩家骅[1] 胡余根[1] 郑海 深町共荣 吉尺正美 江原健治 中岛哲夫 

机构地区：[1]安徽大学物理系,合肥230039 [2]埼玉工业大学

出　　处：《安徽大学学报（自然科学版）》1993年第3期26-31,共6页Journal of Anhui University(Natural Science Edition)

摘　　要：本文讨论用GaAs的有效反常散射因数来测定Ga在其K吸收限附近的f的方法,并用两组Bijvoet对的积分反射强度较好地求得了f。The method of using effective anomalous scattering factor method in determination of anomalous scattering factor f″_(Ga) for Ga near the K absorption edge in GaAs is discussed in the pa- per. Then f″_(Ga) is well determined by using different two sets of intensities between Bijvoet pair re- flexions.

关 键 词：反常散射 砷化镓 吸收限 镓 

分 类 号：TN304.23[电子电信—物理电子学]