锗酸镉中镨的长余辉发光特性  

Long Afterglow Luminescence Property of Cd_2Ge_7O_(16)∶Pr^(3+)

作　　者：易守军[1] 刘应亮[1] 张静娴[1] 袁定胜[1] 容建华[1] 黄浪欢[1] 

机构地区：[1]暨南大学化学系,广东广州510632

出　　处：《中国稀土学报》2004年第2期280-283,共4页Journal of the Chinese Society of Rare Earths

基　　金：国家自然科学基金资助项目(59982003;20171018);广东省自然科学基金资助项目(36706;013201)

摘　　要：通过高温固相法在空气条件下制得Cd2Ge7O16∶Pr3+长余辉发光材料。测其结构为一单相。分析了Cd2Ge7O16,Cd2Ge7O16∶Pr3+的激发光谱和发射光谱,指出Cd2Ge7O16∶Pr3+的发光是Cd2Ge7O16本身和Pr3+离子发射产生,基质的发光是Cd2Ge7O16中有陷阱能级,电子从导带跃迁到陷阱能级而产生,Pr3+的发光是该离子的4f-4f跃迁产生的;并把该材料的长余辉性质归结为基质结构中有电子陷阱和空穴陷阱,电子陷阱和空穴陷阱分别能储存电子和空穴,从而产生余辉。并提出余辉机理模型。Cd_2Ge_7O_(16)∶Pr^(3+) were prepared by the high temperature solid state method. The material is a single phase. From the emission spectra and excitation spectra of Cd_2Ge_7O_(16)∶Pr^(3+) and Cd_2Ge_7O_(16), it is seen that luminescence of Cd_2Ge_7O_(16)∶Pr^(3+) originates in Cd_2Ge_7O_(16) and Pr^(3+) separately. It is also shown that luminescence of Cd_2Ge_7O_(16)∶Pr^(3+) is due to the 4f-4f transition of Pr^(3+) ion and the transition of Cd_2Ge_7O_(16) from conductive band to trap level. Long afterglow property of Cd_2Ge_7O_(16)∶Pr^(3+) is due to the electron trap and hole trap of Cd_2Ge_7O_(16)∶Pr^(3+). The electron trap can capture electron and the hole trap can also capture hole. So afterglow luminescence appears. Afterglow mechanism was described.

关 键 词：发光学 Cd2Ge7O16:pr^3+ 长余辉 电子陷阱 空穴陷阱 稀土 

分 类 号：O482.31[理学—固体物理] O614.33[理学—物理]