表面声波在一维电子通道中诱导产生的声电电流  

Quantized Current in One-dimensional Channel Induced by Surface Acoustic Waves

作　　者：高宏雷[1] 盛钢[1] 李玲[1] 高洁[1] 

机构地区：[1]四川大学物理科学与技术学院,成都610064

出　　处：《四川大学学报（自然科学版）》2004年第3期598-602,共5页Journal of Sichuan University(Natural Science Edition)

基　　金：科技部重大基础研究前期研究专项基金(2002CCA02600)

摘　　要：表面声波(SAW)在GaAs/AlxGa1-xAs异质结表面上沿由分裂门产生的准一维电子通道方向传播时,在通道中可诱导产生声电电流.根据准经典(WKB)近似,计算出一维电子通道钳断情况下的量子化声电电流,并详细讨论了源漏偏压和库仑相互作用对声电电流的影响.An acoustoelectric current is induced by a surface acoustic wave (SAW) launched along the quasi-one-dimensional electron channel defined in a GaAs/AlxGa1-xAs heterostructure by split gates. Using the WKB approximation, the authors calculated an acoutoelectric current in a pinched-off quasi-one-dimensional channel. The authors discussed the effect on acoustoeletric current caused by Coulomb interaction between electrons and source-drain bias.

关 键 词：表面声波 准一维电子通道 量子阱 声电电流 

分 类 号：O422[理学—声学] O424[理学—物理]