光电流瞬态谱中半绝缘砷化镓的EL2峰的研究  

Study of EL2 Peak in LEC SI-GaAs by PICTS

作　　者：龚大卫[1] 孙恒慧 

机构地区：[1]复旦大学李政道物理学综合实验室,上海200433

出　　处：《Journal of Semiconductors》1993年第11期659-663,共5页半导体学报（英文版）

基　　金：国家自然科学基金

摘　　要：本文用加栅的光电流瞬态谱(PICTS)方法研究了半绝缘砷化镓材料中的深能级缺陷,发现加栅后可使PICTS对EL2等靠近禁带中央的缺陷变得灵敏,并分析了其中原因,认为材料中费米能级位置对PICTS结果有影响。Gated-photo induced transient spectroscopy (PICTS) has been used to study the deeplevel defects in SI-GaAs material. In many cases, it is found that the gated PICTS can bemore sensitive to those mid-gap defects (such as EL2) than the traditional PICTS. And weattribute this effect to the Fermi level shift near the surface after the metal deposition.

关 键 词：砷化镓 光电流 瞬态谱 

分 类 号：TN304.23[电子电信—物理电子学]