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出 处:《中国有色金属学报》2004年第F01期394-397,共4页The Chinese Journal of Nonferrous Metals
基 金:国家"八六三"计划资助项目(2001AA312030;2001AA312290);国家重点基础研究发展规划资助项目(G2000036601);国家杰出青年基金资助项目(69825109)
摘 要:由于芯片封装成器件后频率响应会降低,介绍了10Gbit/s系统用的激光器和探测器的封装技术来封装芯片。通过研究发现,通过金丝电感可以补偿芯片和热沉的寄生电容,从而使封装后的器件频率响应有所改善。利用此封装技术,实现了3dB调制带宽为10.5GHz的TO封装激光器。并在此基础上,研发了10Gbit/sTransponder,且此10Gbit/sTransponder的测试性能完全满足MSA和ITU T规范,符合应用要求。Usually, the magnitude of the transmission coefficient of the packaged laser module is lower than that of the laser diode. The packaging techniques for laser diodes and photodiodes for 10 Gbit/s applications was introduced. The results show that the response of the laser module can be superior to that of the laser diode at some frequencies. The improvement was based on the compensation of bonding wire inductance to the parasitic capacitance in both the submount and the laser diode. TO packaging techniques can achieve a frequency bandwidth of over 10.5 GHz for TO laser module, 15.5 GHz for butterfly laser module and 16.5 GHz for TO photodetector. The 10 Gbit/s Transponders was also developed, and the results of measurements show that the transponders can meet the requirements of MSA and ITU-T.
分 类 号:TN248[电子电信—物理电子学] TN929.1
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