辉光放电质谱法测定高纯锑中的痕量杂质元素  

Determination of Trace Element in High Purity Sb by Glow Discharge Mass Spectrometry

作　　者：荣百炼[1] 普朝光[1] 姬荣斌[1] 鲁燕杰 

机构地区：[1]昆明物理研究所,云南昆明650223 [2]云南通海大方科技公司,云南通海652700

出　　处：《质谱学报》2004年第2期96-99,共4页Journal of Chinese Mass Spectrometry Society

摘　　要：采用辉光放电质谱法 ( GDMS)对高纯半导体材料锑中的 Mg、Si、S、Mn等 1 4种痕量杂质元素进行测量。对仪器工作参数进行了优化选择 ,并对杂质浓度与溅射时间的关系、质谱干扰对测量的影响及测量的准确性和重现性进行了探讨。实验表明 :样品经足够长时间的溅射 ,可以消除样品制备和处理过程中的表面污染 ,可以为其它高纯材料的检测提供可靠的科学依据。The trace elements of fourteen kinds of Mg, Si, S, Mn, ect., in high purity Sb were analyzed by glow discharge mass spectrometer (GDMS). The working parameters of measuring were optimized. The correlation of concentration for impurity in samples versus sputtering time, the influence of spectral interference on measurement results and the accuracy and repeatability of measurement were discussed. The results showed the surface contamination produced in sample preparation and treatment can be eliminated if the sample was sputtered for enough time. The characteristics can help to establish the scientific basis for measuring the other high purity materials. GDMS is one of most efficient tools to analyze these materials.

关 键 词：高纯锑 痕量分析 杂质元素 辉光放电质谱法 半导体材料 

分 类 号：TN304[电子电信—物理电子学]