掺杂效应对氧化锡纳米晶微结构、形貌及其光学性能的影响  

EFFECTS OF DOPING ON THE MICROSTRUCTURE, MORPHOLOGY AND OPTICAL PROPERTIES FOR NANOCRYSTALLINE TIN OXIDES

作　　者：胡春霞[1] 吴佑实[1] 马学军[2] 

机构地区：[1]山东大学材料科学与工程学院,济南市250061 [2]曲阜师范大学体育科学学院,山东省曲阜市273165

出　　处：《曲阜师范大学学报（自然科学版）》2004年第3期69-74,共6页Journal of Qufu Normal University(Natural Science)

摘　　要：以二价SnCl2 无机盐为原料 ,基于配合物前躯体方法制备了氧化锡及铜离子掺杂氧化锡纳米晶 .根据DSC和TG分析结果在 5 5 0℃对前驱体进行煅烧 .运用FTIR、UV -VIS、XRD和TEM HRTEM等测试手段对两纳米晶材料进行了分析表征 .掺杂后掺杂相氧化物分散驻留在SnO2 晶粒表面 ,阻止了SnO2 晶粒表面的扩散 ,从而抑制其晶粒生长 .此外 ,铜离子掺杂使得表面缺陷附近的自由电子能有效的定域化 ,从而使SnO2 纳米晶体系的直接和间接带隙能均向高能方向移动 .试验证明以无机盐代替金属醇盐为原料是切实可行的 ,且配合物前躯体法简单易操作 。Beginning with SnCl-2, Cu doping tin oxide nanocrystallines with different microstructure, morphology and optical properties were synthesized by the method of coordination precursor. The pure and doped tin oxides were characterized by differential scanning calorimetry (DSC) and thermogravimetric analysis (TG), X-ray diffraction (XRD), transmission electron microscope (TEM) and high- resolution transmission electron microscope (HRTEM), FTIR and UV-VIS. The experiment results show that the Cu ions, resided almost on the surface of tin oxide nanocrystallines, can prevent the surface diffusion, which leads to the growth of small size particles. In addition, the microstructure changes of the doped sample lead to a different optical propertie. By leading to more effective localization of free electrons at the surface defects of the host materials, Cu doping causes the band-gap of direct and indirect transition type all move toward higher energy. It is practical to prepare SnO-2 with inorganic salts instead of alkoxide and will do great favor to the industrialization of such kinds of materials.

关 键 词：SNO2纳米晶 掺杂 结构表征 光学性能 

分 类 号：TB3[一般工业技术—材料科学与工程]