利用双载流子四陷阱模型解释Zn:Fe:LiNbO_3晶体记录过程中的自擦除现象  

Study of self-erasing of recording process in Zn:Fe:LiNbO_3 with the double-carrier four_trap model

作　　者：孟庆鑫[1] 宫德维[1] 张建隆[1] 孙秀冬[1] 

机构地区：[1]哈尔滨工业大学应用物理系,哈尔滨150001

出　　处：《物理学报》2004年第6期1788-1792,共5页Acta Physica Sinica

基　　金：教育部优秀青年教师资助计划 ;黑龙江省留学归国基金 (批准号 :LC0 1C11);哈尔滨工业大学校基金 (批准号 :HIT2 0 0 1.3 3 )资助的课题~~

摘　　要：比较了掺Fe量相同的两种晶体Fe :LiNbO3和Zn :Fe :LiNbO3的光折变性能 ,并且给出了Zn :Fe :LiNbO3晶体光电导和衍射效率与入射总光强的关系 .在Zn :Fe :LiNbO3晶体二波耦合实验中观察到衍射效率随记录时间的增长先增加 ,达到饱和后又逐渐减小的自擦除现象 ,并采用光折变双载流子四陷阱模型对该现象加以解释 .在此基础上选择合适的曝光时序 ,利用角度复用技术在该晶体中进行体全息存储 ,并在同一点上存入Photorefractive properties of Zn:Fe:LiNbO 3 crystals were compared with Fe:LiNbO 3 crystals. We described the photoconduction and diffraction efficiency as a function of incident light intensity. The self_erasing of recording process in the Zn:Fe:LiNbO 3 crystal is observed. We found that the diffraction efficiency of the crystal increased to a saturation value and then decreased as recording time increases. The phenomena were explained by the double_carrier four_trap model. A suit able exposure schedule is chosen to realize the angle_multiplexed volume holographic storage. We have stored 30 images in the same volume of the crystal.

关 键 词：双载流子四陷阱模型 自擦除 电子-空穴竞争 铌酸锂晶体 锌掺杂 铁掺杂 角度复用 

分 类 号：O437[机械工程—光学工程]