Polycrystalline Silicon Gettered by Porous Silicon and Heavy Phosphorous Diffusion  

作　　者：刘祖明 Souleymane K Traore 张忠文 罗毅 

机构地区：[1]Solar Energy Research Institute, Yunnan Provincial Renewable Energy Engineering Key Laboratory, Yunnan Normal University, Kunming 650092, China [2]Department of Electronic Engineering, Tsinghua University, Beijing 100084, China

出　　处：《Tsinghua Science and Technology》2004年第2期242-245,共4页清华大学学报（自然科学版（英文版）

摘　　要：The biggest barrier for photovoltaic (PV) utilization is its high cost, so the key for scale PV utiliza-tion is to further decrease the cost of solar cells. One way to improve the efficiency, and therefore lower the cost, is to increase the minority carrier lifetime by controlling the material defects. The main defects in grain boundaries of polycrystalline silicon gettered by porous silicon and heavy phosphorous diffusion have been studied. The porous silicon was formed on the two surfaces of wafers by chemical etching. Phosphorous was then diffused into the wafers at high temperature (900℃). After the porous silicon and diffusion layers were removed, the minority carrier lifetime was measured by photo-conductor decay. The results show that the lifetime抯 minority carriers are increased greatly after such treatment.The biggest barrier for photovoltaic (PV) utilization is its high cost, so the key for scale PV utiliza-tion is to further decrease the cost of solar cells. One way to improve the efficiency, and therefore lower the cost, is to increase the minority carrier lifetime by controlling the material defects. The main defects in grain boundaries of polycrystalline silicon gettered by porous silicon and heavy phosphorous diffusion have been studied. The porous silicon was formed on the two surfaces of wafers by chemical etching. Phosphorous was then diffused into the wafers at high temperature (900℃). After the porous silicon and diffusion layers were removed, the minority carrier lifetime was measured by photo-conductor decay. The results show that the lifetime抯 minority carriers are increased greatly after such treatment.

关 键 词：polycrystalline gettering grain boundaries passivation porous silicon heavy phosphorous  diffusion 

分 类 号：TN304[电子电信—物理电子学]