微通道板电子透射膜工艺的AES研究  

Studies of Electron Transmission Film at the Input of MCP by AES

作　　者：闫金良 

机构地区：[1]烟台师范学院物理系,山东烟台264025

出　　处：《光子学报》2004年第6期677-680,共4页Acta Photonica Sinica

摘　　要：用冷基底溅射方法和静电贴膜方法分别在微通道板表面制备了电子透射膜 ,采用俄歇电子能谱 (AES)研究了两种工艺制备的微通道板电子透射膜的薄膜成分 ,微通道板电子透射膜工艺失败微通道板通道表面的成分和通道内壁的成分随深度的变化 .结果表明 ,冷基底溅射方法制膜工艺的失败对MCP造成了严重的碳污染 ,污染的MCP不可回收 ;静电贴膜方法制膜工艺的失败对MCP通道表面没有明显影响 ,MCP可回收利用 .Electron transmission films at the input of microchannel plate(MCP) are fabricated by cold basement sputtering and electrostatic film-posting technologies. The surface compositions of the electron transmission films at the input of MCP are measured respectively by Auger electron spectroscopy(AES). Some active channel surface composition and inner channel depth profile analyses are also made for MCPs through failing technique. It is found that the failing technique of cold basement sputtering causes the serious carbon contamination on the active channel surface of MCP, such MCPs cannot be rejuvenated. However, the failing technique of electrostatic film-posting has no effect on the active channel surface, such MCPs can be rejuvenated.

关 键 词：微通道板 电子透射膜 像增强器 碳污染 

分 类 号：TN105.1[电子电信—物理电子学] TN223