硅光电二极管激光损伤阈值随激光脉宽的变化  

Variation in damage thresholds of Si photodiodes with laser pulse duration

作　　者：罗福[1] 江继军[1] 孙承纬[1] 

机构地区：[1]中国工程物理研究院流体物理研究所,四川绵阳621900

出　　处：《强激光与粒子束》2004年第6期685-688,共4页High Power Laser and Particle Beams

基　　金：国家 8 63计划项目资助课题

摘　　要：对飞秒激光辐照下硅光电二极管损伤阈值进行了实验测量 ,对从 1s到 6 0fs不同脉宽激光辐照下硅光电二极管损伤阈值进行了讨论。实验数据表明 ,在 1s到 10ns脉宽范围内损伤所需能量密度近似而非严格地与脉宽的平方根成正比。信号分析表明硅光电二极管的损伤主要由热效应造成 ,而 6 0fs激光辐照下的损伤阈值为 0 .1J/cm2 。The damage thresholds of Si PIN (p-type intrinsic n-type) photodiodes irradiated by 800 nm fs laser with pulse duration of 60 fs have been measured. The damage thresholds of Si photodiodes irradiated by laser pulse of different duration from 1 s to 60 fs are present and discussed. Experimental data indicate that damage fluence increases approximately but not strictly with square root of pulse duration for pulses longer than 10 ns. The output signal analysis shows that the damage was caused mainly by thermal effect. However the damage threshold to 60 fs laser is 0.1 J/cm2, which deviates apparently from that predicted by general temperature distribution model.

关 键 词：飞秒激光 硅光电二极管 损伤阈值 脉宽效应 

分 类 号：TN249[电子电信—物理电子学]