以硅为衬底的ZnO p-n结的制备及其结构、光学和电学特性  

ZnO p-n Junctions Grown on Silicon and Their Structural, Optical and Electrical Properties

作　　者：许小亮 杨晓杰[2] 谢家纯[2] 徐传明[2] 徐军[1] 刘洪图[1] 施朝淑[1] 

机构地区：[1]中国科学院结构分析重点实验室,安徽合肥230026 [2]中国科学技术大学物理系,安徽合肥230026

出　　处：《发光学报》2004年第3期295-299,共5页Chinese Journal of Luminescence

基　　金：国家"8 63"计划 ( 2 0 0 2AA3 13 0 3 0 ) ;国家"973"计划 (国科基字 [2 0 0 1] 5 1号 );安徽省自然科学基金 ( 0 0 0 465 0 6)资助项目

摘　　要：分别在n型半绝缘Si、弱n (n )以及强n (n+ )型Si片 (1 0 0 )面上用射频磁控反应溅射法和直流磁控反应溅射法制备了p型ZnO薄膜以及ZnO同质p n结。其中在生长p型ZnO时 ,反应室中通以过量的氧。对上述p型和n型ZnO薄膜进行了X射线衍射测量 ,在 34.1°附近得到了 0 .3°左右半峰全宽的ZnO(0 0 2 )衍射峰。ZnO薄膜的原子力显微镜图像上可见六角型的自组装结构。阴极射线荧光的测量显示了位于 390nm的紫外特征峰。用I V特性仪测量了上述ZnOp n结原型器件的I V电学输运曲线 ,其正向显示了约为 1 .1V的阈值 ,与日美科研人员用直流溅射和扩散法制备的ZnOp n结相似 。The p ZnO and the ZnO p n homojunctions on n Si(110) were grown by the methods of RF and DC reaction magnetron sputtering. An oxygen rich condition has been kept in growing process of the p ZnO. The FWHM of the ZnO (002) diffraction peaks are 0.3° obtained by XRD measurements. A hexagonal self assembled structure of the ZnO films is shown by atomic force microscopy. The 390 nm UV emission peak of the ZnO films present in the cathodoluminescence spectra. The I V property of the ZnO p n junction was measured by an I V character. The curve indicates a value of 1.1 volts forward threshold, which is equal to the results of the ZnO p n junction grown in Japan and America using DC sputtering method and diffusion method; meanwhile the backward characteristics of our sample is much better.

关 键 词：氧化锌 P-N结 硅 电流-电压特性 

分 类 号：TN304.21[电子电信—物理电子学] TN304.12