基于SiC MOSFET的交错并联Boost变换器电压尖峰抑制方法  

An Interleaved Parallel Boost Converter Voltage Spike Suppression Method Based on the SiC MOSFET

作　　者：王朋辉 付有良 邹爱龙 刘志鹏 王永军 

机构地区：[1]内燃机与动力系统全国重点实验室,山东 潍坊 [2]潍柴动力股份有限公司,山东 潍坊

出　　处：《电力与能源进展》2023年第6期185-193,共9页Advances in Energy and Power Engineering

摘　　要：大功率变换器的发展趋势是高频率、高效率和高功率密度。与传统的Si MOSFET相比,SiC MOSFET因具有开关速度快、开关损耗低、工作温度高等优点,得到了广泛的应用。然而,SiC MOSFET在高速关断过程中容易产生电压尖峰和振荡,严重威胁到功率变换器的可靠运行。针对这一问题,本文对SiC MOSFET关断过程进行详细分析后,分别针对影响关断电压尖峰的两种因素,提出了相应的抑制方法。为验证所提方法的有效性,搭建了试验平台。通过试验结果可知,所提出的方法可以有效抑制关断过程中产生的电压尖峰,而不会显著增加开关损耗。The trend for high-power converters is high frequency, high efficiency, and high power density. Compared to traditional silicon-based power devices, the original MOSFET is widely used because of its fast switching speed, low switching losses, and high operating temperatures. However, in this way, MOSFETs are prone to voltage spikes and oscillations during high-speed shutdown, seriously threatening the reliable operation of the power converter. In response to this issue, this article provides a detailed analysis of the SiC MOSFET shutdown process and proposes corresponding suppression methods for the two factors that affect the shutdown voltage spike. To verify the effectiveness of the proposed method, an experimental platform was established. The experimental results show that the proposed method can effectively suppress voltage spikes generated during the shutdown process without significantly increasing switch losses.

关 键 词：交错并联 BOOST变换器 电压尖峰抑制 

分 类 号：TM4[电气工程—电器]