二维硒化锡的生长及光电特性研究  

Growth and Optoelectronic Properties of Two-Dimensional Tin Selenide

作　　者：张晓娟 郑韬 周颖慧[1] 

机构地区：[1]厦门大学物理系,福建 厦门

出　　处：《应用物理》2023年第5期249-255,共7页Applied Physics

摘　　要：硒化锡因其优异的物理特性以及元素储量丰富等优点,成为近年来备受关注的新兴二维半导体材料之一,在光电、光伏和热电等领域展现出极大的应用潜力。目前,硒化锡二维晶体的可控制备仍然存在挑战,阻碍了其结构特性的深入研究和器件应用的发展。本文利用气相输运方法进行硒化锡的生长调控,考察了前驱体选择和衬底温度等条件对材料生长的影响,获得了大尺寸高质量的硒化锡二维晶片,基于所制备的材料搭建的光电探测器在250 nm~1100 nm的波长范围内均有响应,并表现出良好的光响应特性。该研究结果为高质量二维硒化锡的可控制备及其在光电器件中的应用提供了参考。Tin selenide, a newly emerging two-dimensional semiconductor, has attracted intense attention in recent years due to its excellent physical properties and advantages such as earth abundance, which exhibits great potential for optoelectronic, photovoltaic and thermoelectric applications. However, the controllable preparation of two-dimensional tin-selenide crystals remains a challenge to date, which hinders the in-depth study on its structural properties and practical applications. In this work, we demonstrate the successful fabrication of large-scale and high-quality tin selenide flakes by vapor transport method. The effects of precursor and substrate temperature on the growth of SnSe have been investigated. The photodetectors based on the grown SnSe show good performance with a broadband photoresponse in the wavelength range of 250 nm~1100 nm. The results provide a valuable reference for the controllable preparation of high-quality tin selenide two-dimensional crystals and the application in optoelectronic devices.

关 键 词：硒化锡 气相输运 光电探测器 

分 类 号：F42[经济管理—产业经济]