二维MoS₂/MoO₂混合层结构的制备与表征  

Preparation and Characterization of Two Dimensional MoS2/MoO2 Mixed Structures

作　　者：邓加军[1] 叶晨骁 黄燕峰 车剑韬 王文杰[1] 丁迅雷 

机构地区：[1]华北电力大学数理学院,北京

出　　处：《凝聚态物理学进展》2019年第2期33-40,共8页Advances in Condensed Matter Physics

基　　金：国家自然科学基金(91545122);中央高校基本科研业务费专项资金(JB2016084);中央高校基本科研业务费专项资金(JB2015RCY03)资助项目。

摘　　要：近年来,半导体性的二维过渡金属硫族化合物(2D-TMDCs)由于其在半导体工业上的潜在应用而备受青睐。本文利用化学气相沉积法(CVD),以MoO3粉末和S粉为前驱体,制备出了六边形和四边形的MoS2/MoO2混合层结构。我们首先利用光学显微镜(OM)和扫描电镜(SEM)观测了样品,然后通过X射线光电子谱(XPS)和能量色散谱(EDS)测试对样品的成分进行了初步判定,最后通过Raman光谱确定了我们制备的样品就是MoS2/MoO2混合层结构。同时,我们通过对比实验,对混合层结构的生长机理进行了探究。In recent years,semiconducting two-dimensional transition metal dichalcogenides have been concerned for their potential applications in the semiconductor industry.In this paper,the hexagonal and rhomboic MoS2/MoO2 mixed structures were prepared by chemical vapor deposition method using MoO3 powder and S powder as precursors.First,the morphology of samples was observed by optical microscopy and SEM,and then the composition of samples was determined by XPS and EDS.Finally,the MoS2/MoO2 mixed structures of samples we prepared was confirmed by the Raman spectra.At the same time,we tried to explore the growth mechanisms of the mixed structure by comparative experiments.

关 键 词：二维材料 化学气相沉积法 MoS₂/MoO₂混合层结构 

分 类 号：TB3[一般工业技术—材料科学与工程]