势场调控下石墨烯/六方氮化硼范德瓦尔斯异质结的能带结构  

Band Structure of Graphene/Hexagonal Boron Nitride Van Der Waals Heterojunction Manipulated by Potential Field

作　　者：董记明 徐雷 张军[1,2] 

机构地区：[1]新疆大学,新疆大学物理科学与技术学院,理论物理中心,新疆 乌鲁木齐 [2]新疆大学,新疆固态物理与器件重点实验室,新疆 乌鲁木齐

出　　处：《凝聚态物理学进展》2021年第3期73-79,共7页Advances in Condensed Matter Physics

摘　　要：石墨烯和六方氮化硼堆叠在一起时可以通过范德瓦尔斯力形成层状异质结,称为范德瓦尔斯异质结。我们利用紧束缚模型研究了AA堆叠和AB堆叠结构下石墨烯/六方氮化硼范德瓦尔斯异质结体系的能带结构。提出了利用局域势和层间势调控能带的有效方法。结果表明,势场可以改变范德瓦尔斯材料的能带结构,使体系从绝缘相向金属相转变。When graphene and hexagonal boron nitride are stacked together, a layered heterojunction can be formed by van der Waals force, which is called van der Waals heterojunction. We use the tight-binding model to study the band structure of the AA-stacked and AB-stacked graphene/hexagonal boron nitride van der Waals heterojunctions. An effective method to manipulate the energy band by using the local potential and the inter-layer potential is proposed. The results show that the potential fields can change the energy band structures of van der Waals materials, leading to a phase transition from insulating phase to metallic phase.

关 键 词：石墨烯/氮化硼异质结 局域势 层间势 能隙 

分 类 号：TB3[一般工业技术—材料科学与工程]