二维层状磁性半导体材料FePSe₃的物理性质研究  

Study on Physical Properties of Two-Dimensional Layered Magnetic Semiconductor Material FePSe3

作　　者：刘博 杨艺 傅瑜[1] 何俊宝 

机构地区：[1]南阳师范学院物理与电子工程学院,河南 南阳

出　　处：《凝聚态物理学进展》2022年第2期21-27,共7页Advances in Condensed Matter Physics

摘　　要：本文采用化学气相输运(CVT)法生长了大尺寸高质量的过渡金属–磷–三硒化物FePSe3的单晶样品,通过扫描电镜–能谱系统(SEM-EDX)、X射线衍射仪(XRD)、综合物性测量系统(PPMS)和磁性测量系统(MPMS)研究了该单晶样品的化学成分、晶体结构、电输运性质和磁各向异性。单晶和粉末X射线衍射表明FePSe3是具有三角晶体结构的典型层状材料。面内电阻率随温度变化曲线表明FePSe3是半导体材料,激活能约为268 meV。磁化率随温度变化曲线表明FePSe3在109 K发生具有明显一级相变特征的反铁磁相变;反铁磁相变温度之上面内磁化率和面间磁化率都表现居里–外斯顺磁行为,但外斯温度符号相反,表现出明显的各向异性。The transition metal phosphorus trisulfides FePSe3 was successfully grown by chemical vapor transport (CVT) method. The chemical composition, crystal structure, electrical transport properties, and magnetic anisotropy have been studied by scanning electron microscope-energy dispersion spectrum (SEM-EDX), X-ray diffractometer (XRD), physical property measurement system (PPMS), and magnetic property measurement system (MPMS). Single crystal and powder X-ray diffraction pattern confirms that FePSe3 belongs to the trigonal crystal structure, and has the features of van der Waals layer structure. The in-plane resistivity increases with decreasing temperature and exhibits semiconductor behavior with an activation energy of 268 meV. In high temperature, the in-plane and out-of-plane magnetic susceptibility increase with decreasing temperature and exhibit Curie-Weiss paramagnetic behavior, but the Weiss temperatures of both directions have a different sign which indicates that the magnetic properties of FePSe3 are anisotropic. With decreasing temperature, the magnetic susceptibility of both directions shows a sharp decrease at the temperature of 109 K and then almost keeps a constant, which is a typical antiferromagnetic transition, but further analysis suggests that the antiferromagnetic transition is a first-order phase transition.

关 键 词：二维层状磁性半导体材料 单晶制备 晶体结构 物理性质 

分 类 号：TG1[金属学及工艺—金属学]