背照式CMOS图像传感器像素结构影响分析  

Analysis for the Influence of Pixel Structure in Backside Illuminated CMOS Image Sensor

作　　者：王玮 

机构地区：[1]上海集成电路研发中心有限公司,上海

出　　处：《传感器技术与应用》2024年第3期471-479,共9页Journal of Sensor Technology and Application

摘　　要：本文使用Ansys Lumerical FDTD软件建立了BSI-CIS工艺的仿真模型,利用该模型基于55 nm BSI-CIS工艺,针对2 um和2.79 um尺寸的像素单元,对850 nm、940 nm波段不同CDTI图形结构的量子效率值进行仿真,从而获得各自近红外吸收最高的CDTI图形结构,该结构可在850 nm波长获得45%以上的量子效率。A back-side illuminated CMOS (BSI-CMOS) simulation model based on Ansys Lumerical FDTD was proposed. The Quantum Efficiency (QE) of 2 um and 2.79 um pitch pixel on different CDTI graphic design structures in 850 nm, 940 nm waveband were simulated and studied for 55 nm BSI-CIS process. The simulation results showed that the CDTI graph structure with the highest near-infrared absorption can be obtained, and the quantum efficiency of the structure can be more than 45% at 850 nm wavelength.

关 键 词：BSI-CIS工艺 仿真 CDTI图形结构 量子效率 

分 类 号：TP3[自动化与计算机技术—计算机科学与技术]