硅光电二极管的光谱响应测量及其响应时间研究  

Study on Measurement of Spectral Response and Response Time of Silicon Photodiodes

作　　者：曾丽娜 李林 李再金 杨红[1] 李功捷 赵志斌 李志波 乔忠良 曲轶 刘国军 

机构地区：[1]海南师范大学,物理与电子工程学院,海南省激光技术与光电功能材料重点实验室,海南 海口

出　　处：《现代物理》2020年第5期73-78,共6页Modern Physics

摘　　要：在气流和温度稳定,卤素灯照明为背景光的环境下,当硅光电二极管未达到最大响应时测量了硅光电二极管对入射光波长为400 nm至1050 nm的光谱响应。分析了硅光电二极管的光谱响应的影响条件和硅光电二极管的光谱响应规律。在测光电路中采用不同的负载电阻和偏置电压测试硅光电二极管的响应时间,解释了硅光电二极管的物理特性。The spectral response of Silicon photodiodes with incident light wavelengths of 400 nm to 1050 nm is measured when Silicon photodiodes do not reach maximum response in the background light with no external light, steady air flow and temperature, and halogen lighting. The influence of the relevant conditions on the spectral response of Silicon photodiodes and the laws of the spectral response of Silicon photodiodes are analyzed. The response time of Silicon photodiodes is measured by different resistance and bias voltages during the light measuring, and the physical characteristics of Silicon photodiodes are explained.

关 键 词：硅光电二极管 光谱响应 时间响应 

分 类 号：TN3[电子电信—物理电子学]