GaAs基1.55微米自组织InAs量子点材料生长研究进展  

Research Progress on the Growth of 1.55 μm Self-Assembled InAs Quantum Dots Based on GaAs

作　　者：曾丽娜 杨云帆 秦振[2] 李林 刘兆悦 李再金 赵志斌 陈浩 乔忠良 曲轶 刘国军 

机构地区：[1]海南师范大学物理与电子工程学院,海南省激光技术与光电功能材料重点实验室,海南 海口 [2]吉林大学教育技术中心,吉林 长春

出　　处：《现代物理》2021年第4期88-97,共10页Modern Physics

摘　　要：光纤通讯用GaAs基高性能1.55微米量子点激光器引起了人们的广泛关注。然而,由较大晶格失配引起的应变、位错等缺陷,导致GaAs基InAs量子点材料的光增益严重降低。目前利用低温外延生长,InGaAs或AlGaAsSb缓冲层,GaAsSb盖层,高In组分InGaAs应变减小层技术,以及引入Sb元素,能拓展InAs量子点的发光波长至1.55微米,然而量子点表面和界面缺陷导致发光特性严重变差。Sb对InAs量子点材料的缺陷、面密度、均匀性及光学特性均有影响。There has been considerable interest in the development of high performance 1.55 µm quantum dots (QDs) lasers based on GaAs for optical communications. However, the optical gain of GaAs-based InAs quantum dot materials seriously decrease due to the large lattice mismatch de-fects such as strains and dislocations. Currently using low-temperature epitaxial growth, InGaAs or AlGaAsSb buffer layer, GaAsSb cap layer, high In composition InGaAs strain reduction layer, and the cooperation of Sb element can expand the emission wavelength of InAs dots up to 1.55 microns. However, the surface and interface defects of the QDs cause serious deterioration of the Photolu-minescence. Sb element affects the InAs QDs material defects, density, uniformity and optical properties.

关 键 词：INAS量子点 量子点激光器 光纤通讯 发光波长 低温外延 缓冲层 材料生长 光增益 

分 类 号：TN3[电子电信—物理电子学]