AZO透明导电膜的光电性能研究  

Study on the Photoelectric Properties of AZO Transparent Conductive Films

作　　者：王宇[1] 余云鹏[1] 张汉焱 林钢 徐从康 王江涌[1] 

机构地区：[1]汕头大学,广东汕头 [2]汕头超声显示器有限公司,广东汕头 [3]无锡舒玛天科新能源技术有限公司,江苏无锡

出　　处：《材料科学》2018年第4期401-411,共11页Material Sciences

基　　金：广东省科技计划项目(编号2017A010103021).

摘　　要：本文采用射频磁控溅射法在玻璃衬底表面制备了Al2O3掺杂的ZnO薄膜(AZO膜),使用四探针薄膜方阻仪、XRD和分光光度计对AZO薄膜光电性能进行了表征分析。研究了制备参数和退火条件对AZO薄膜光电性能的影响,获得了制备高透过率(90%)和低方阻(15 Ω/□) AZO薄膜最佳工艺参数。In this paper, ZnO thin films doped Al2O3 (AZO) were prepared on glass substrate by radio fre-quency magnetron sputtering. The photoelectric properties of AZO thin films were characterized by four-point probe, XRD and spectrophotometer. The optimal sputtering and annealing parameters for the best performance AZO thin films with transmittance up to 90% and square resistance as low as 15 Ω/□ were obtained.

关 键 词：ZNO 掺杂 溅射 方阻 透过率 

分 类 号：O48[理学—固体物理]