Cu、Sn掺杂的沟道型β-Ga₂O₃半导体薄膜光电器件的制备及特性研究  

Preparation and Characterization of Channeled β-Ga2O3 Semiconductor Thin Film Optoelectronic Devices Doped with Cu and Sn Elements

作　　者：刘畅[1] 刘俊[1] 刘源 胡馨月 李旺[1] 柳婕 李梦轲[1] 

机构地区：[1]辽宁师范大学,物理与电子技术学院,辽宁 大连

出　　处：《材料科学》2023年第3期200-212,共13页Material Sciences

摘　　要：本文利用双靶射频磁控溅射技术,在不同实验条件下,开展了本征β-Ga2O3和Cu、Sn掺杂的沟道型β-Ga2O3半导体薄膜光电器件的制备及特性研究工作。分析了掺杂前后制备的二维β-Ga2O3薄膜的微结构、表面形貌及化学成份。比较了不同条件下制备器件的电导率、IV特性及光电特性。研究发现,Cu、Sn掺杂后,β-Ga2O3半导体薄膜光电器件的电导率、IV特性和光电特性都有一定的改善,而Sn掺杂的Sn/β-Ga2O3薄膜的电导率增加幅度最大。其中,Sn/β-Ga2O3器件呈现了最佳IV特性,说明Sn掺杂比Cu掺杂的效果更好。同时,掺杂并进行退火处理更可使薄膜的电导率呈现数量级的提升。制备的不同二维沟道型器件都具有明显的场效应器件特征,可用外加底栅电压VGS调控器件的源漏电流IGS。在254 nm的紫外光源辐照下,所有器件都出现了明显的光电流。但掺杂后器件的光电流明显高于本征器件的光电流,Sn掺杂Sn/β-Ga2O3器件的光电流最大,响应时间最短,光电流与暗电流之比可达112,器件具有更好的稳定性和可逆性。In this work, the channeled intrinsic, Cu- and Sn-doped β-Ga2O3 semiconductor thin film optoelectronic devices were fabricated under different experi-mental conditions by double target RF magnetron sputtering technology. The characteristics of the prepared β-Ga2O3 thin films and optoelectronic devices before and after doping were systematically investigated, including the microstructure, surface morphology, chemical composition of the 2D β-Ga2O3 thin films as well as the photo-electric properties of the devices. It was found that the per-formances of the Cu- and Sn-doped channeled β-Ga2O3 optoelectronic devices were significantly im-proved, such as the conductivity, IV and photoelectric characteristic. Especially, the conductivity of Sn-doped β-Ga2O3 thin films showed the largest increase and exhibited a typical IV characteristic, which indicates that the properties of β-Ga2O3 films can be improved by Sn-doping compared to Cu doping. Moreover, doping and annealing methods can increase the conductivity of the β-Ga2O3 thin films by orders of magnitude. The results showed that the different two-dimensional channeled op-toelectronic devices have an obvious field effect device characteristic, and the IGS of the optoelec-tronic devices can be controlled by the back gate voltage. All of the as-prepared devices have a good response to the ultraviolet (UV) light under 254 nm UV irradiation. However, the photocurrent of the Cu- and Sn-doped devices is much higher than that of the undoped device. Additionally, Sn-doped β-Ga2O3 optoelectronic device demonstrated a higher photocurrent with a fast response time, and the ratio of photocurrent to dark current can be up to 112, which has the advantage of better stability and reversibility.

关 键 词：β-Ga₂O₃ 掺杂 半导体器件 光电特性 

分 类 号：TN3[电子电信—物理电子学]