二硫化锡薄膜的生长及掺杂研究  

Growth and Doping of Tin Disulfide Thin Films

作　　者：许书逸 林高翔 周颖慧[1] 

机构地区：[1]厦门大学物理系,福建 厦门

出　　处：《材料科学》2023年第6期511-517,共7页Material Sciences

摘　　要：二硫化锡是近年来备受关注的二维半导体材料之一,因其优异的电学和光电性能以及元素储备丰富且对环境友好等优点,在电子、光电以及能源转换等领域展现出极大的应用潜力。目前,高质量薄层二硫化锡的可控制备仍是研究中备受关注的重要课题。本文采用气相外延方法探索二硫化锡薄膜的外延生长和掺杂调控,结合多种表征测试技术,研究其生长过程和结构特性,实现了材料的逐层生长。进一步地在生长过程中引入铟掺杂,由于晶格有序度的降低,二硫化锡的拉曼特征峰展宽且强度减弱,X射线光电子能谱分析发现,铟的掺入使得体系费米能级下移,实现了p型掺杂。研究结果为二硫化锡的可控生长以及掺杂提供了参考。Tin disulfide (SnS2) is one of the widely con-cerned two-dimensional semiconductor materials in recent years, which exhibits excellent electri-cal and optoelectronic properties, as well as advantages such as abundant elemental reserves and environmental friendliness, and therefore shows great potential for applications in electronics, op-toelectronics, and energy conversion. The controllable fabrication of few-layer SnS2 with high quali-ty remains an important research topic so far. In this study, the growth and doping of SnS2 thin films have been performed by vapor phase epitaxy. Combining various characterization techniques, the growth mode and structural properties of SnS2 have been investigated. Furthermore, indium (In) doping has been introduced during the growth process, which led to a broadening and weakening of the Raman peaks of SnS2 due to the reduced lattice order. X-ray photoelectron spectroscopy studies reveal that the introduction of In results in the shift down of the Fermi level and produces p-type doping in SnS2. The research findings provide valuable insights for the controllable growth and structural properties of the intrinsic and doped tin disulfide.

关 键 词：二硫化锡 气相外延 掺杂 

分 类 号：TQ3[化学工程]