高透光率电磁屏蔽薄膜工艺及应用研究  

Research on the Technology and Application of High Transmittance Electromagnetic Shielding Film

作　　者：王腾[1] 张莉[1] 钱明灿 

机构地区：[1]中国电子科技集团公司第三十三研究所,山西 太原

出　　处：《材料科学》2023年第11期961-967,共7页Material Sciences

摘　　要：ITO薄膜在光电窗口的电磁屏蔽领域应用广泛,但是在玻璃表面沉积ITO薄膜材料在潮湿环境下玻璃表面的杂质离子会渗入ITO薄膜中,引起ITO薄膜的色斑腐蚀现象,采用SiO2过渡层的方式,采用真空镀膜沉积系统,在光学玻璃基底表面依次沉积SiO2和ITO薄膜材料,研究了过渡层和导电膜的沉积温度、沉积功率、沉积速率、Ar/O2流量比等工艺参数对导电性和透光率等性能的影响。通过正交试验优化设计,得出SiO2过渡层的最佳工艺参数为沉积温度为室温,沉积功率为500 W (RF),小车移动速率为100 mm/min,Ar/O2流量比为50:0.5;ITO薄膜的最佳工艺参数为沉积温度为360℃,沉积功率为1450 W (DC),小车移动速率195 mm/min,Ar/O2流量比为55:0.5;SiO2/ITO复合薄膜的可见光透过率为83.1%,电磁屏蔽效能在30 MHz~5 GHz均 ≥ 32 dB。ITO thin films are widely used in the electromagnetic shielding field of optoelectronic windows. However, when ITO thin film materials are deposited on the glass surface in a humid environment, impurity ions on the glass surface can penetrate into the ITO thin film, causing color spot corrosion of the ITO thin film. SiO2 transition layer is used, and a vacuum coating deposition system is used. SiO2 and ITO thin film materials are sequentially deposited on the optical glass substrate surface. The effects of process parameters such as deposition temperature, deposition power, deposition rate, and Ar/O2 flow ratio on the conductivity and transmittance of the transition layer and conductive film were studied. Through orthogonal experimental optimization design, the optimal process parameters for the SiO2 transition layer were obtained as follows: deposition temperature at room temperature, deposition power at 500 W (RF), the moving speed of the car is 100 mm/min, and Ar/O2 flow ratio at 50:0.5;The optimal process parameters for ITO thin films are deposition temperature of 360˚C, deposition power of 1450 W (DC), the moving speed of the car is 195 mm/min, and Ar/O2 flow ratio of 55:0.5;The visible light transmittance of SiO2/ITO composite film is 83.1%, and the electromagnetic shielding efficiency is ≥ 32 dB between 30 MHz and 5 GHz.

关 键 词：高透光率 电磁屏蔽 复合薄膜 耐腐蚀 

分 类 号：TB3[一般工业技术—材料科学与工程]