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作 者:王群 区炳显[1] 杨永强[1] 刘峥[1] 朱楠 赵宇
机构地区:[1]江苏省特种设备安全监督检验研究院无锡分院,江苏 无锡 [2]南京工程学院工程训练中心应用技术学院,江苏 南京
出 处:《材料科学》2024年第10期1446-1454,共9页Material Sciences
摘 要:作为一种二维材料,石墨烯因其超高的导热系数而被广泛研究,特别是在电子器件散热领域。然而,石墨烯界面的低热导限制了石墨烯在散热领域中应用。为了提高石墨烯界面的热传导效率,文章通过聚焦镓离子束对石墨烯进行离子辐照,研究了离子辐照能量对石墨烯界面热输运的影响。实验测量结果显示,随着离子辐照能量的增加,Al/graphene/SiO2的界面热导呈现上升的趋势,并且在30 kV能量下升高了近3倍。实验表征及理论计算结果显示,镓离子辐照破坏了石墨烯原有的晶格结构,导致离子辐照石墨烯表面上的C/O化学官能团发生了重构,提高了铝膜与离子辐照石墨烯之间界面的吸附作用,进而增加了界面上的声子透射率,最终提升了Al/graphene/SiO2的界面热导。As a two-dimensional material, graphene has been widely studied for its ultra-high thermal conductivity, especially in the field of electronic device cooling. However, the high thermal resistance at the graphene interface limits the application of graphene in the field of heat dissipation. In order to improve the heat conduction efficiency of graphene interface, the effects of energy of ion irradiation on the thermal transport across the graphene interface are investigated in this paper after graphene irradiated by focusing gallium ion beams. It is demonstrated that the interfacial thermal conductance of Al/graphene/SiO2 shows an upward trend with increasing energy and increases up to nearly 3 times at the energy of 30 kV. The experimental characterization and theoretical calculation results show that Ga ion irradiation destroys the original lattice structure of graphene, leading to the reconstruction of C/O chemical functional groups on the ion-irradiated graphene surface, which intensifies the adsorption strength between Al film and ion-irradiated graphene. The increased interfacial adsorption strength is beneficial to more phonons being able to transport across the interface
分 类 号:TB3[一般工业技术—材料科学与工程]
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