PTCDA纯度对PTCDA/p-Si光电探测器性能的影响  

Effect of PTCDA Purity on the Performance of PTCDA/p-Si Photodetector

作　　者：李霞[1,2] 张盛东 王静 张浩力[3] 张福甲[2] 

机构地区：[1]兰州大学物理学院微电子学研究所,甘肃 兰州 [2]北京大学深圳研究生院,广东 深圳 [3]兰州大学功能有机分子化学国家重点实验室,甘肃 兰州

出　　处：《光电子》2021年第4期205-213,共9页Optoelectronics

摘　　要：本文研究不同纯度的PTCDA制备的PTCDA/p-Si光电探测器的制备和性能。研究结果表明:PTCDA纯度越高,制备的探测器暗电流越小,光电流越大。制备的探测器的正向电流–电压特性越好,呈二极管特性曲线。而且探测器的反向暗电流越小,其反向光电流也越小。The preparation and performance of PTCDA/p-Si photodetectors prepared by PTCDA with different purity were studied in this paper. The results show that the higher the purity of PTCDA, the smaller the dark current and the greater the photocurrent. The better the forward current voltage characteristic of the prepared detector, the better the diode characteristic curve. Moreover, the smaller the reverse dark current of the detector, the smaller the reverse photocurrent.

关 键 词：PTCDA 纯度 OIHJ 光电探测器 I-V特性 

分 类 号：TN3[电子电信—物理电子学]