多晶硅厚膜太阳电池最佳厚度理论设计  

Theoretical Design of Optimum Thickness for Polycrystalline Thick Film Silicon Solar Cells

作　　者：贺凯[1] 陈诺夫[1] 孔凡迪[1] 白一鸣[1] 牟潇野 杨博[1] 陶泉丽 何海洋[1] 陈心一 陈吉堃 

机构地区：[1]新能源电力国家重点实验室,华北电力大学可再生能源学院,北京 [2]常州英诺能源技术有限公司,江苏常州

出　　处：《可持续能源》2015年第4期33-41,共9页Sustainable Energy

基　　金：北京市自然科学基金资助项目(No:2151004);中央高校基本科研业务费专项资金资助(No:13ZD05)。

摘　　要：晶体硅太阳电池是生产工艺最成熟、性能最稳定、应用最广泛的光电转换器件。目前晶体硅太阳电池的厚度一般为200μm左右,这一厚度对于光电转换效率不是最佳值。本文分别从少子扩散和入射光吸收两方面对晶体硅太阳电池厚度进行了理论分析,获得晶体硅太阳电池的最佳厚度为49 μm。今后,晶体硅太阳电池的发展趋势必然是厚度为49 μm的晶体硅厚膜结构。The crystalline silicon solar cells are the most mature, most stable and most widely used photoe-lectric converters in the world. At present, the thickness of crystalline silicon solar cells is gener-ally about 200 μm, and this thickness is not the best for the photoelectric conversion efficiency. In this paper, the thickness of crystalline silicon solar cells is theoretically analyzed from two aspects of the minority carrier diffusion as well as the incident light absorption. The optimum thickness of the crystalline silicon solar cells is 49 μm. In the future, the development trend of crystalline silicon solar cells is the crystalline silicon thick film structure with thickness of about 49 μm.

关 键 词：多晶硅厚膜 太阳电池 少子扩散 厚度 

分 类 号：TN3[电子电信—物理电子学]