Performance Improvement of CIGS Solar Cell: A Simulation Approach by SCAPS-1D  

作　　者：Md. Ferdous Wahid Md. Nuralam Howlader Nazmul Ahasan Md. Mizanur Rahman Md. Ferdous Wahid;Md. Nuralam Howlader;Nazmul Ahasan;Md. Mizanur Rahman(Department of Electrical and Electronic Engineering, Hajee Mohammad Danesh Science and Technology University, Dinajpur, Bangladesh)

机构地区：[1]Department of Electrical and Electronic Engineering, Hajee Mohammad Danesh Science and Technology University, Dinajpur, Bangladesh

出　　处：《Energy and Power Engineering》2023年第8期291-306,共16页能源与动力工程（英文）

摘　　要：Thin-film solar cells possess the distinct advantage of being cost-effective and relatively simple to manufacture. Nevertheless, it is of utmost importance to enhance their overall performance. In this research work, copper indium gallium selenide (CIGS)-based ultra-thin solar cell (SC) configuration (Ag/ZnO/ZnSe/CIGS/Si/Ni) has been designed and examined using SCAPS-1D. The numerical calculations revealed that this new design resulted in a substantial improvement in SC performance. This study explores the utilization of two absorber layers, CIGS and Si, both with a total of 2 μm thickness, to enhance device performance while reducing material costs, observing an increase in key SC parameters as the Si absorber layer thickness is increased, reaching a maximum efficiency of 29.13% when CIGS and Si thicknesses are set at 0.4 μm and 1.6 μm, respectively with doping absorber doping density of 10¹⁴ cm^-3. Furthermore, we analyze the impact of variation in absorber and buffer layer thickness, as well as doping concentration, surface recombination velocity (SRV), electron affinity, series-shunt resistance, and temperature, on optimized CIGS SC parameters such as short-circuit current density (J_SC), open circuit voltage (V_OC), fill factor (FF), and power conversion efficiency (PCE). The findings yielded by the investigation offer significant elucidation regarding the fabrication of economically viable and highly efficient non-hazardous CIGS ultra-thin SC.Thin-film solar cells possess the distinct advantage of being cost-effective and relatively simple to manufacture. Nevertheless, it is of utmost importance to enhance their overall performance. In this research work, copper indium gallium selenide (CIGS)-based ultra-thin solar cell (SC) configuration (Ag/ZnO/ZnSe/CIGS/Si/Ni) has been designed and examined using SCAPS-1D. The numerical calculations revealed that this new design resulted in a substantial improvement in SC performance. This study explores the utilization of two absorber layers, CIGS and Si, both with a total of 2 μm thickness, to enhance device performance while reducing material costs, observing an increase in key SC parameters as the Si absorber layer thickness is increased, reaching a maximum efficiency of 29.13% when CIGS and Si thicknesses are set at 0.4 μm and 1.6 μm, respectively with doping absorber doping density of 10¹⁴ cm^-3. Furthermore, we analyze the impact of variation in absorber and buffer layer thickness, as well as doping concentration, surface recombination velocity (SRV), electron affinity, series-shunt resistance, and temperature, on optimized CIGS SC parameters such as short-circuit current density (J_SC), open circuit voltage (V_OC), fill factor (FF), and power conversion efficiency (PCE). The findings yielded by the investigation offer significant elucidation regarding the fabrication of economically viable and highly efficient non-hazardous CIGS ultra-thin SC.

关 键 词：Thin-Flim CIGS-Based Solar Cell Non-Toxic Solar Cell SCAPS-1D Numerical Simulation Renewable Energy 

分 类 号：TM9[电气工程—电力电子与电力传动]