XPS Depth Profile Study of Sprayed Ga₂O₃ Thin Films  

作　　者：Towhid Adnan Chowdhury Towhid Adnan Chowdhury(Department of Electrical & Electronic Engineering, Ahsanullah University of Science & Technology, Dhaka, Bangladesh)

机构地区：[1]Department of Electrical & Electronic Engineering, Ahsanullah University of Science & Technology, Dhaka, Bangladesh

出　　处：《Engineering（科研）》2023年第8期459-466,共8页工程（英文）（1947-3931）

摘　　要：Ga₂O₃ thin films were fabricated by spray pyrolysis method using gallium acetylacetonate as source material and water as oxidizer. The films were annealed at 450°C for 60 minutes in argon atmosphere. X-ray photoelectron spectroscopy (XPS) depth profile studies were carried out to analyze the stoichiometry and composition of sprayed as-deposited and annealed Ga₂O₃ thin films. Surface layers and the inner layers of as-deposited and annealed films were found nearly stoichiometric.Ga₂O₃ thin films were fabricated by spray pyrolysis method using gallium acetylacetonate as source material and water as oxidizer. The films were annealed at 450°C for 60 minutes in argon atmosphere. X-ray photoelectron spectroscopy (XPS) depth profile studies were carried out to analyze the stoichiometry and composition of sprayed as-deposited and annealed Ga₂O₃ thin films. Surface layers and the inner layers of as-deposited and annealed films were found nearly stoichiometric.

关 键 词：Ga₂O₃ Thin Films x-Ray Photoelectron Spectroscopy Depth Profiling 

分 类 号：TG1[金属学及工艺—金属学]