Design of a Low Power Low-Noise Amplifier with Improved Gain/Noise Ratio  

作　　者：Raja Mahmou Khalid Faitah Raja Mahmou;Khalid Faitah(Engineering Sciences and Technology Laboratory (LABSTI), Private University of Marrakech (UPM), Marrakech, Morocco;Laboratory of Engineering Sciences for Energy (LabSIPE), National School of Applied Sciences (ENSAJ), El Jadida, Morocco)

机构地区：[1]Engineering Sciences and Technology Laboratory (LABSTI), Private University of Marrakech (UPM), Marrakech, Morocco [2]Laboratory of Engineering Sciences for Energy (LabSIPE), National School of Applied Sciences (ENSAJ), El Jadida, Morocco

出　　处：《World Journal of Engineering and Technology》2024年第1期80-91,共12页世界工程和技术（英文）

摘　　要：This work details the development of a broad-spectrum LNA (Low Noise Amplifier) circuit using a 65 nm CMOS technology. The design incorporates an inductive degeneracy circuit, employing a theoretical approach to enhance gain, minimize noise levels, and uphold low power consumption. The progression includes a shift to a cascode structure to further refine LNA parameters. Ultimately, with a 1.8 V bias, the achieved performance showcases a gain-to-noise figure ratio of 16 dB/0.5 dB, an IIP3 linearity at 5.1 dBm, and a power consumption of 3 mW. This architecture is adept at operating across a wide frequency band spanning from 0.5 GHz to 6 GHz, rendering it applicable in diverse RF scenarios.This work details the development of a broad-spectrum LNA (Low Noise Amplifier) circuit using a 65 nm CMOS technology. The design incorporates an inductive degeneracy circuit, employing a theoretical approach to enhance gain, minimize noise levels, and uphold low power consumption. The progression includes a shift to a cascode structure to further refine LNA parameters. Ultimately, with a 1.8 V bias, the achieved performance showcases a gain-to-noise figure ratio of 16 dB/0.5 dB, an IIP3 linearity at 5.1 dBm, and a power consumption of 3 mW. This architecture is adept at operating across a wide frequency band spanning from 0.5 GHz to 6 GHz, rendering it applicable in diverse RF scenarios.

关 键 词：LNA DEGENERACY Noise Figure LINEARITY Power Consumption GAIN 

分 类 号：TN7[电子电信—电路与系统]