The Nonideality Coefficient of Current-Voltage Characteristics for Asymmetric p-n-Junctions in a Microwave Field  

作　　者：Gafur Gulyamov Muhammadjon Gulomkodirovich , Dadamirzaev Hasan Yusupovich Mavlyanov 

机构地区：[1]Namangan Engineering Pedagogical Institute, Namangan, Uzbekistan [2]Namangan State University, Namangan, Uzbekistan

出　　处：《Journal of Applied Mathematics and Physics》2015年第12期1679-1683,共5页应用数学与应用物理（英文）

摘　　要：It is shown that the nonideality coefficient m actually depends on the electron temperature Te, and the hole temperature Th. We get more general expression for the nonideality coefficient, taking into account the concentration of electrons and holes, as well as their temperature, coefficient and diffusion length, the temperature of the phonons, the applied voltage, and the height of the potential barrier.It is shown that the nonideality coefficient m actually depends on the electron temperature Te, and the hole temperature Th. We get more general expression for the nonideality coefficient, taking into account the concentration of electrons and holes, as well as their temperature, coefficient and diffusion length, the temperature of the phonons, the applied voltage, and the height of the potential barrier.

关 键 词：Hot ELECTRONS The Microwave Field The Open CIRCUIT Voltage Short CIRCUIT Current CURRENT-VOLTAGE Characteristics of p-n-Junction The NONIDEALITY COEFFICIENT 

分 类 号：TN3[电子电信—物理电子学]