Photosensitivity Spectra of Thin Films from a CdSe_xS_1-x Solid Solution  

作　　者：Tokhirbek Imomalievich Rakhmonov Tokhirbek Imomalievich Rakhmonov(Department of Physics, Ferghana Polytechnic Institute, Ferghana, Uzbekistan)

机构地区：[1]Department of Physics, Ferghana Polytechnic Institute, Ferghana, Uzbekistan

出　　处：《Journal of Applied Mathematics and Physics》2022年第12期3676-3683,共8页应用数学与应用物理（英文）

摘　　要：The results of a study of the energy spectra of the activation of intrinsic defects of a photosensitive film made from the CdSe_xS_1-x solid solution depending on the conditions of preparation and heat treatment in various media are presented. It is shown that at x = 0.8 cadmium vacancies create a deep level with an activation energy Е_v + (0.63 ± 0.02) eV, a complex of chlorine atom with a cadmium vacancy creates a level Е_v + (0.43 ± 0.02) eV, as well as the fast recombination center Еv + (0.92 ± 0.02) eV. The formation of selenium vacancies due to the introduction of chlorine and its combination with cadmium leads to the appearance of a sticking level Е_c - (0.19 ± 0.02) eV. CdSe_0.8S_0.2 films can be used to develop light emitting diodes, photo sensors, IR and visible lasers.The results of a study of the energy spectra of the activation of intrinsic defects of a photosensitive film made from the CdSe_xS_1-x solid solution depending on the conditions of preparation and heat treatment in various media are presented. It is shown that at x = 0.8 cadmium vacancies create a deep level with an activation energy Е_v + (0.63 ± 0.02) eV, a complex of chlorine atom with a cadmium vacancy creates a level Е_v + (0.43 ± 0.02) eV, as well as the fast recombination center Еv + (0.92 ± 0.02) eV. The formation of selenium vacancies due to the introduction of chlorine and its combination with cadmium leads to the appearance of a sticking level Е_c - (0.19 ± 0.02) eV. CdSe_0.8S_0.2 films can be used to develop light emitting diodes, photo sensors, IR and visible lasers.

关 键 词：Thin Polycrystalline Film Solid Solution PHOTOCONDUCTIVITY Activation Energy Spectrum Substrate Temperature Deep Impurity Centers 

分 类 号：TB3[一般工业技术—材料科学与工程]