Photoelectric State with Long-Term Relaxation in CdTe:(Ag, Cu, Cd) and Sb₂Se₃:Se Photovoltaic Films  

作　　者：Ozodbek Ravshanboy o‘g‘li Nurmatov Dilkhumor Tolibjonovna Mamadieva Nosirjon Khaydarovich Yuldashev Ozodbek Ravshanboy o‘g‘li Nurmatov;Dilkhumor Tolibjonovna Mamadieva;Nosirjon Khaydarovich Yuldashev(Department of Physics, Ferghana Polytechnic Institute, Ferghana, Uzbekistan)

机构地区：[1]Department of Physics, Ferghana Polytechnic Institute, Ferghana, Uzbekistan

出　　处：《Journal of Applied Mathematics and Physics》2024年第1期43-51,共9页应用数学与应用物理（英文）

摘　　要：The results of an experimental study of long-term relaxation of the photoelectret state of polycrystalline CdTe:(Ag, Cu, Cd) and Sb₂Se₃:Se films with an anomalous photovoltaic property are presented. In such films, the residual photovoltage is caused by the separation of photocarriers by the built-in electrostatic field of the near-surface region of space charges and their asymmetric capture by deep levels of impurities or complexes, including impurity atoms and intrinsic defects, both in the bulk and on the surface of crystal grains. It has been shown that in activated films, a two-step exponential temporary relaxation of the initial photovoltage of the order of V_APV ≈ (500-600) V is detected, and only 10% of it experiences long-term relaxation (t ≈ 100-120 min).The results of an experimental study of long-term relaxation of the photoelectret state of polycrystalline CdTe:(Ag, Cu, Cd) and Sb₂Se₃:Se films with an anomalous photovoltaic property are presented. In such films, the residual photovoltage is caused by the separation of photocarriers by the built-in electrostatic field of the near-surface region of space charges and their asymmetric capture by deep levels of impurities or complexes, including impurity atoms and intrinsic defects, both in the bulk and on the surface of crystal grains. It has been shown that in activated films, a two-step exponential temporary relaxation of the initial photovoltage of the order of V_APV ≈ (500-600) V is detected, and only 10% of it experiences long-term relaxation (t ≈ 100-120 min).

关 键 词：Thin Polycrystalline Films Doping Deep Centers Anomalous Photovoltage Photoelectret State Long-Term Relaxation 

分 类 号：O48[理学—固体物理]