n⁺-p-p⁺Silicon Solar Cell Base Optimum Thickness Determination under Magnetic Field  

作　　者：Cheikh Thiaw Mamadou Lamine Ba Mamour Amadou Ba Gora Diop Ibrahima Diatta Mor Ndiaye Gregoire Sissoko Cheikh Thiaw;Mamadou Lamine Ba;Mamour Amadou Ba;Gora Diop;Ibrahima Diatta;Mor Ndiaye;Gregoire Sissoko(Laboratory of Semiconductors and Solar Energy, Physics Department, Faculty of Science and Technology, University Cheikh Anta Diop, Dakar, Senegal)

机构地区：[1]Laboratory of Semiconductors and Solar Energy, Physics Department, Faculty of Science and Technology, University Cheikh Anta Diop, Dakar, Senegal

出　　处：《Journal of Electromagnetic Analysis and Applications》2020年第7期103-113,共11页电磁分析与应用期刊（英文）

摘　　要：Base optimum thickness is determined for a front illuminated bifacial silicon solar cell n⁺-p<span style="font-size:10px;">-</span>p⁺ under magnetic field. From the magneto transport equation relative to excess minority carriers in the base, with specific boundary conditions, the photocurrent is obtained. From this result the expressions of the carrier’s recombination velocity at the back surface are deducted. These new expressions of recombination velocity are plotted according to the depth of the base, to deduce the optimum thickness, which will allow the production, of a high short-circuit photocurrent. Calibration relationships of optimum thickness versus magnetic field were presented according to study ranges. It is found that, applied magnetic field imposes a weak thickness material for solar cell manufacturing leading to high short-circuit current.Base optimum thickness is determined for a front illuminated bifacial silicon solar cell n⁺-p<span style="font-size:10px;">-</span>p⁺ under magnetic field. From the magneto transport equation relative to excess minority carriers in the base, with specific boundary conditions, the photocurrent is obtained. From this result the expressions of the carrier’s recombination velocity at the back surface are deducted. These new expressions of recombination velocity are plotted according to the depth of the base, to deduce the optimum thickness, which will allow the production, of a high short-circuit photocurrent. Calibration relationships of optimum thickness versus magnetic field were presented according to study ranges. It is found that, applied magnetic field imposes a weak thickness material for solar cell manufacturing leading to high short-circuit current.

关 键 词：Silicon Solar Cell MAGNETOTRANSPORT Surface Recombination Velocity Base Thickness 

分 类 号：TG1[金属学及工艺—金属学]