The Conductivity of Indium Phosphide Irradiated by Fast Electrons  

作　　者：Sh. Sh. Rashidova 

机构地区：[1]Institute of Physics, Azerbaijan National Academy of Sciences, Baku, Azerbaijan

出　　处：《Journal of Modern Physics》2013年第11期1508-1510,共3页现代物理（英文）

摘　　要：In this work, studied electrical conductivity(s) and annealing of radiation defects in crystals of n-InP are irradiated by electrons energy of 6 MeV and doses of 1017 el/cm2 (centimeter) and 2 × 1017 el/cm2 (centimeter). It is shown that alongside point defects (in the form of complexes with impurity atoms in crystals of n-InP) also form the complex defects of the type of disordered areas, annealing of which proceeds at T > 300°C that binds accumulating radiation defects.In this work, studied electrical conductivity(s) and annealing of radiation defects in crystals of n-InP are irradiated by electrons energy of 6 MeV and doses of 1017 el/cm2 (centimeter) and 2 × 1017 el/cm2 (centimeter). It is shown that alongside point defects (in the form of complexes with impurity atoms in crystals of n-InP) also form the complex defects of the type of disordered areas, annealing of which proceeds at T > 300°C that binds accumulating radiation defects.

关 键 词：Antistructural DEFECTS ACTIVATION Energy INDIUM PHOSPHIDE Radiothermoluminescence Method 

分 类 号：O6[理学—化学]