AC Recombination Velocity in the Back Surface of a Lamella Silicon Solar Cell under Temperature  

作　　者：Youssou Traore Ndeye Thiam Moustapha Thiame Amary Thiam Mamadou Lamine Ba Marcel Sitor Diouf Ibrahima Diatta Oulymata Mballo El Hadji Sow Mamadou Wade Grégoire Sissoko 

机构地区：[1]Laboratory of Semiconductors and Solar Energy, Physics Department, Faculty of Science and Technology, University Cheikh Anta Diop, Dakar, Senegal [2]Laboratory of Sciences and Techniques of Water and Environment, Polytechnic School of Thiès, Thiès, Senegal [3]University Assane SECK, Ziguinchor, Senegal

出　　处：《Journal of Modern Physics》2019年第10期1235-1246,共12页现代物理（英文）

摘　　要：The ac recombination velocity of the excess minority carriers, in the back surface of a silicon solar cell with a vertical junction connected in series, is developed through Einstein’s law giving the diffusion coefficient of minority carriers according to temperature, through mobility. The frequency spectrum of both, amplitude and phase, are produced for the diffusion coefficient and the recombination velocity in the rear face, in order to identify the parameters of equivalent electric models.The ac recombination velocity of the excess minority carriers, in the back surface of a silicon solar cell with a vertical junction connected in series, is developed through Einstein’s law giving the diffusion coefficient of minority carriers according to temperature, through mobility. The frequency spectrum of both, amplitude and phase, are produced for the diffusion coefficient and the recombination velocity in the rear face, in order to identify the parameters of equivalent electric models.

关 键 词：Vertical Multi-Junctions Solar Cell AC BACK SURFACE Recombination Velocity TEMPERATURE Bode and Nyquist Diagrams 

分 类 号：TM9[电气工程—电力电子与电力传动]