机构地区:[1]Laboratoire de Matriaux, dHliophysique et Environnement (LaMHE), Dpartement de Physique, UFR/ST Universit Nazi Boni, Bobo Dioulasso, Burkina Faso [2]Laboratoire de Matriaux et Environnement, Dpartement de Physique, UFR/SEA, Universit Joseph Ki-Zerbo, Ouagadougou, Burkina Faso
出 处:《Open Journal of Applied Sciences》2025年第1期42-52,共11页应用科学(英文)
摘 要:This study examines the influence of magnetic field and temperature on the transient voltage of a polycrystalline silicon radial junction solar cell in a dynamic regime under multispectral illumination. Radial junction solar cells represent a major advancement in photovoltaic technologies, as they optimize light absorption and charge collection efficiency. The focus is on the impact of the magnetic field and temperature on the decay of transient voltage, which provides crucial information on recombination processes and the lifetime of minority carriers. The results reveal that the magnetic field tends to increase the transient voltage by directly affecting the transient electron density. Indeed, for B > 7 × 10−5 T, the magnetic field prolongs the relaxation time by increasing the transient voltage amplitude. Additionally, rising temperatures accelerate (ranging from 290 K to 450 K) recombination processes, thereby reducing the transient voltage, although this effect is moderated by the presence of a magnetic field. The study highlights the complex interaction between magnetic field and temperature, with significant impacts on the transient behaviour.This study examines the influence of magnetic field and temperature on the transient voltage of a polycrystalline silicon radial junction solar cell in a dynamic regime under multispectral illumination. Radial junction solar cells represent a major advancement in photovoltaic technologies, as they optimize light absorption and charge collection efficiency. The focus is on the impact of the magnetic field and temperature on the decay of transient voltage, which provides crucial information on recombination processes and the lifetime of minority carriers. The results reveal that the magnetic field tends to increase the transient voltage by directly affecting the transient electron density. Indeed, for B > 7 × 10−5 T, the magnetic field prolongs the relaxation time by increasing the transient voltage amplitude. Additionally, rising temperatures accelerate (ranging from 290 K to 450 K) recombination processes, thereby reducing the transient voltage, although this effect is moderated by the presence of a magnetic field. The study highlights the complex interaction between magnetic field and temperature, with significant impacts on the transient behaviour.
关 键 词:ELECTRONS Radial Junction Transient Voltage Magnetic Field Operating Temperature
分 类 号:TG1[金属学及工艺—金属学]
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