Proposed Model of Electric Field Effects in High-Purity GaAs at Room Temperature  

作　　者：Durga Prasad Sapkota Madhu Sudan Kayastha Makoto Takahashi Koichi Wakita 

机构地区：[1]Graduate School of Engineering, Chubu University, Kasugai, Japan [2]Research and Development, Nepal Telecom, Kathmandu, Nepal

出　　处：《Optics and Photonics Journal》2014年第5期99-103,共5页光学与光子学期刊（英文）

摘　　要：We have proposed a new model for the calculation of excitonic electroabsorption based on modified previously reported models for bulk structure. The excitonic absorption spectra in high purity GaAs have been theoretically studied in the presence of electric field at room temperature (RT). The Stark shift, linewidth broadening of exciton and extinction ratio have been calculated as a function of electric field. For the validity of our model we have compared with experimental result.We have proposed a new model for the calculation of excitonic electroabsorption based on modified previously reported models for bulk structure. The excitonic absorption spectra in high purity GaAs have been theoretically studied in the presence of electric field at room temperature (RT). The Stark shift, linewidth broadening of exciton and extinction ratio have been calculated as a function of electric field. For the validity of our model we have compared with experimental result.

关 键 词：OPTOELECTRONICS ELECTROABSORPTION MODULATOR 

分 类 号：O6[理学—化学]