Identification of Optical Transitions by Spectroscopic Ellipsometry (SE) on CuIn₃Se₅Bulk Compounds  

作　　者：Dayane Habib Georges El Haj Moussa 

机构地区：[1]Physics Department, Faculty of Sciences II, Lebanese University, Jdeidet, Lebanon [2]Centre Electronique et Micro-optoélectronique de Montpellier (CEM2), Faculté Sciences et Techniques du Languedoc, Université de Montpellier II, Montpellier, France

出　　处：《World Journal of Condensed Matter Physics》2017年第4期111-122,共12页凝固态物理国际期刊（英文）

摘　　要：Bulk materials were synthesized by the Bridgman technique using the elements Cu, In and Se. These samples were characterized by Energy Dispersive Spectrometry (EDS) to determine the elemental composition, as well as by X-ray diffraction for structure, hot point probe method for type of conductivity, Optical response (Photoconductivity) and Photoluminescence (PL) to determine the band gap value and Spectroscopic Ellipsometry to find energy levels above the gap in the band scheme at room-temperature. They show a nearly perfect stoechiometry and present a p-type conductivity. CuIn3Se5 either has a Stannite structure, an Ordered Defect Chalcopyrite structure (ODC), or an Ordered Vacancy Chalcopyrite structure (OVC). The gap energy obtained for the different samples was 1.23 eV. Energy levels above the gap in the band scheme were determinate by measuring the dielectric function at room temperature for energies lying between 1.5 and 5.5 eV. Many transitions were observed above the gap for different samples. Spectroscopic Ellipsometry gave evidence for the interpretation of the choice of gap values which were compatible with that obtained from solar spectrum.Bulk materials were synthesized by the Bridgman technique using the elements Cu, In and Se. These samples were characterized by Energy Dispersive Spectrometry (EDS) to determine the elemental composition, as well as by X-ray diffraction for structure, hot point probe method for type of conductivity, Optical response (Photoconductivity) and Photoluminescence (PL) to determine the band gap value and Spectroscopic Ellipsometry to find energy levels above the gap in the band scheme at room-temperature. They show a nearly perfect stoechiometry and present a p-type conductivity. CuIn3Se5 either has a Stannite structure, an Ordered Defect Chalcopyrite structure (ODC), or an Ordered Vacancy Chalcopyrite structure (OVC). The gap energy obtained for the different samples was 1.23 eV. Energy levels above the gap in the band scheme were determinate by measuring the dielectric function at room temperature for energies lying between 1.5 and 5.5 eV. Many transitions were observed above the gap for different samples. Spectroscopic Ellipsometry gave evidence for the interpretation of the choice of gap values which were compatible with that obtained from solar spectrum.

关 键 词：Chalcopyrite Photovoltaic BULK Materials STANNITE Photoluminescence Optical Response X-Ray Diffraction PHOTOCONDUCTIVITY Spectroscopic Ellipsometry 

分 类 号：TB3[一般工业技术—材料科学与工程]