Preparation of CuYO₂ Thin Films by Sol-Gel Method Using Copper Acetate and Yttrium Acetate as Metal Sources  

作　　者：Takashi Ehara Takashi Ehara(Department of Human Culture, Faculty of Human Science, Ishinomaki Senshu University, Ishinomaki, Japan)

机构地区：[1]Department of Human Culture, Faculty of Human Science, Ishinomaki Senshu University, Ishinomaki, Japan

出　　处：《Journal of Materials Science and Chemical Engineering》2016年第1期24-28,共5页材料科学与化学工程（英文）

摘　　要：Delafossite structured p-type wide bandgap semiconductor, CuYO₂ thin films were prepared on SiO₂ substrate by sol-gel method using copper (II) acetate and yttrium (III) acetate as source materials. The films preparation process was studied by varying annealing temperature after the preparation of gel films by spin coating, followed by thermal annealing at higher temperature. In the present work, one step annealing directly from Cu-Y-gel under nitrogen flow was used. X-ray diffraction (XRD) revealed that the film annealed at 800^。C is significantly c-axis oriented, shows only (002) and (004) peaks at 15.6^。 and 31.5^。, respectively. The optical bandgap of 3.7 - 3.8 eV is estimated by (αhν)2 plot which is higher than previous works. In addition, the films with highly c-axis orientation showed photoluminescence (PL) at room temperature with very broad peak at 2.3 eV. The films annealed at different temperature showed different structural properties.Delafossite structured p-type wide bandgap semiconductor, CuYO₂ thin films were prepared on SiO₂ substrate by sol-gel method using copper (II) acetate and yttrium (III) acetate as source materials. The films preparation process was studied by varying annealing temperature after the preparation of gel films by spin coating, followed by thermal annealing at higher temperature. In the present work, one step annealing directly from Cu-Y-gel under nitrogen flow was used. X-ray diffraction (XRD) revealed that the film annealed at 800^。C is significantly c-axis oriented, shows only (002) and (004) peaks at 15.6^。 and 31.5^。, respectively. The optical bandgap of 3.7 - 3.8 eV is estimated by (αhν)2 plot which is higher than previous works. In addition, the films with highly c-axis orientation showed photoluminescence (PL) at room temperature with very broad peak at 2.3 eV. The films annealed at different temperature showed different structural properties.

关 键 词：CuYO₂ DELAFOSSITE Sol-Gel Thin Films Photoluminescence 

分 类 号：TG1[金属学及工艺—金属学]