The Advent of Wide Bandgap Green-Synthesized Copper Zinc Tin Sulfide Nanoparticles for Applications in Optical and Electronic Devices  

作　　者：Opeyemi S. Akanbi Haruna A. Usman Gbemi F. Abass Kehinde E. Oni Akinsanmi S. Ige Bola P. Odunaro Idowu J. Ojo Julius A. Oladejo Halimat O. Ajani Adnan Musa Joshua Ajao Opeyemi S. Akanbi;Haruna A. Usman;Gbemi F. Abass;Kehinde E. Oni;Akinsanmi S. Ige;Bola P. Odunaro;Idowu J. Ojo;Julius A. Oladejo;Halimat O. Ajani;Adnan Musa;Joshua Ajao(Department of Pure and Applied Physics, Ladoke Akintola University of Technology, Ogbomosho, Nigeria;Department of Mechanical Engineering, Jigawa State Polytechnic, Dutse, Nigeria;Department of Materials Science and Engineering, Hohai University, Nanjing, China;Department of Mechanical Engineering, Ekiti State University, Ado Ekiti, Nigeria;Department of Materials Science and Engineering, University of Colorado Boulder, Boulder, USA;Department of Chemical Engineering, Ladoke Akintola University of Technology, Ogbomoso, Nigeria;Department of Mechanical Engineering, Federal University of Technology, Akure, Nigeria;Department of Biotechnology and Genetics, Russian State Agrarian University, Moscow, Russia)

机构地区：[1]Department of Pure and Applied Physics, Ladoke Akintola University of Technology, Ogbomosho, Nigeria [2]Department of Mechanical Engineering, Jigawa State Polytechnic, Dutse, Nigeria [3]Department of Materials Science and Engineering, Hohai University, Nanjing, China [4]Department of Mechanical Engineering, Ekiti State University, Ado Ekiti, Nigeria [5]Department of Materials Science and Engineering, University of Colorado Boulder, Boulder, USA [6]Department of Chemical Engineering, Ladoke Akintola University of Technology, Ogbomoso, Nigeria [7]Department of Mechanical Engineering, Federal University of Technology, Akure, Nigeria [8]Department of Biotechnology and Genetics, Russian State Agrarian University, Moscow, Russia

出　　处：《Journal of Materials Science and Chemical Engineering》2023年第3期22-33,共12页材料科学与化学工程（英文）

摘　　要：Power-electronic devices are widely used in various applications, such as voltage and frequency control for transmitting and converting electric power. As these devices are becoming increasingly important, there is a need to reduce their losses and improve their performance to reduce electric power consumption. Current power semiconductor devices, such as inverters, are made of silicon (Si), but the performance of these Si power devices is reaching its limit due to physical properties and energy bandgap. To address this issue, recent developments in wide bandgap (WBG) semiconductor materials, such as silicon carbide (SiC) and gallium nitride (GaN), offer the potential for a new generation of power semiconductor devices that can perform significantly better than silicon-based devices. In this research, a green synthesized copper-zinc-tin-sulfide (CZTS) nanoparticle is proposed as a new WBG semiconductor material that could be used for optical and electronic devices. Its synthesis, consisting of the production methods and materials used, is discussed. The characterization is also discussed, and further research is recommended in the later sections to enable the continual advancement of this technology.Power-electronic devices are widely used in various applications, such as voltage and frequency control for transmitting and converting electric power. As these devices are becoming increasingly important, there is a need to reduce their losses and improve their performance to reduce electric power consumption. Current power semiconductor devices, such as inverters, are made of silicon (Si), but the performance of these Si power devices is reaching its limit due to physical properties and energy bandgap. To address this issue, recent developments in wide bandgap (WBG) semiconductor materials, such as silicon carbide (SiC) and gallium nitride (GaN), offer the potential for a new generation of power semiconductor devices that can perform significantly better than silicon-based devices. In this research, a green synthesized copper-zinc-tin-sulfide (CZTS) nanoparticle is proposed as a new WBG semiconductor material that could be used for optical and electronic devices. Its synthesis, consisting of the production methods and materials used, is discussed. The characterization is also discussed, and further research is recommended in the later sections to enable the continual advancement of this technology.

关 键 词：Wide Bandgap Semiconductor SEMICONDUCTOR Electronic Device Power Device Optical Device CZTS 

分 类 号：TN3[电子电信—物理电子学]